to-220f plastic-encapsulate transistors KTB1366 transistor (pnp) features z low v ce(sat) : v ce(sat)= -1.0v(max.)(i c /i b =-2a/-0.2a) z complementary to ktd2058 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -7 v i c collector current -continuous -3 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature -55 ~+ 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = -1 ma, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c = -50 ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e = -1m a, i c =0 -7 v collector cut-off current i cbo v cb = -60 v, i e =0 -100 a emitter cut-off current i ebo v eb = -7 v, i c =0 -100 a h fe(1) v ce = -5 v, i c = -0.5 a 60 200 dc current gain h fe(2) v ce = -5 v, i c = -3 a 20 collector-emitter saturation voltage v ce(sat) i c = -2 a, i b = -0.2 a -1 v base-emitter voltage v be v ce = -5 v, i c = -0.5 a -1 v transition frequency f t v ce = -5 v, i c = -0.5 a 9 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 150 pf fall time t f 0.4 s storage time t s i c =-2a, i b1 =-i b2 =-0.2a v cc =-30v 1.7 s classification of h fe(1) rank o y range 60-120 100-200 to-220f 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,dec,2012
|